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DC Field | Value | Language |
---|---|---|
dc.contributor.author | S. Somwan | en_US |
dc.contributor.author | A. Ngamjarurojana | en_US |
dc.date.accessioned | 2018-09-05T03:04:54Z | - |
dc.date.available | 2018-09-05T03:04:54Z | - |
dc.date.issued | 2016-05-26 | en_US |
dc.identifier.issn | 15635228 | en_US |
dc.identifier.issn | 07315171 | en_US |
dc.identifier.other | 2-s2.0-84974687038 | en_US |
dc.identifier.other | 10.1080/07315171.2016.1171633 | en_US |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84974687038&origin=inward | en_US |
dc.identifier.uri | http://cmuir.cmu.ac.th/jspui/handle/6653943832/55920 | - |
dc.description.abstract | © 2016 Taylor & Francis Group, LLC. In this work, (1−x)Pb(Mg1/3Nb2/3)O3−xPbTiO3(PMN−PT) where x = 0.1−0.3 relaxor ferroelectric ceramics were prepared. PMN−PT ceramics were subjected to measurement of dielectric constant by LCR meter by cooling method from 200 to 25°C and investigation subswitching electric field induced strain behaviour was carried out twice, before and after 500°C annealing, by modifiedMichelson interferometric technique at various temperatures (30−70°C). The result showed higher dielectric properties and broad peak at phase transition temperature Tm of ferroelectric to paraelectric, like the nonlinear change of integrated P-E areas and s-E areas around 40 and 90°C for x = 0.1 and 0.2, but the induced strain and integrated s-E area are very sensitive to the annealing effect to observed ferroelectric phase change fromnormal ferroelectric to relaxor phase around 40 and 60°C for x = 0.2 and 0.3. | en_US |
dc.subject | Materials Science | en_US |
dc.subject | Physics and Astronomy | en_US |
dc.title | Temperature dependence on induced−strain behaviour of PMN−PT ceramics | en_US |
dc.type | Journal | en_US |
article.title.sourcetitle | Ferroelectrics, Letters Section | en_US |
article.volume | 43 | en_US |
article.stream.affiliations | Chiang Mai University | en_US |
article.stream.affiliations | Rajamangala University of Technology Lanna | en_US |
Appears in Collections: | CMUL: Journal Articles |
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